st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 description st 04n2 0 d is the n - channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as power management and other battery powered circuits where high - side switching . pin configuration to - 252 part marking p : perduce code w : wafer code y: year code a :product code feature l 200 v/ 4.0 a, r ds(on) = 400 m @v gs = 10v l super high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l to - 252 package design
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage vdss 200 v gate - source voltage vgss 3 0 v continuous drain current (tj=150 ) ta=25 ta= 10 0 id 4 1.2 a pulsed drain current idm 15 a avalanche current i as 10 mj power dissipation ta=25 pd 68 w operation junction temperature tj 7 0 storgae temperature range tstg - 55/150 thermal resistance - junction to ambient r ja 6 0 /w
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,id= 250ua 20 0 v gate threshold voltage v gs(th) v ds =v gs ,id = 2 50ua 3 4.3 5 v gate leakage current i gss v ds =0v,v gs = 3 0v ?00 na zero gate voltage drain current i dss v ds = 20 0 v,v gs =0v 1 ua drain - source on - resistance r ds(on) v gs = 10v,i d = 12 a 375 40 0 m forward transconductance gfs v ds = 50 v,i d = 3 a 3.8 s diode forward voltage v sd i s = 1a ,v gs =0v 1 v dynamic total gate charge q g v ds = 160 v,v gs = 10v i d 4 a 4 5 nc gate - source charge q gs 7.0 gate - drain charge q gd 23 input capacitance c iss v ds = 25 ,v g s =0v f =1mhz 8 00 pf output capacitance c oss 24 0 reverse transfer c apacitance c rss 76 turn - on time t d(on) tr v d s = 100 ,r d = 1 3 v gen = 10 v , i d 2 a r g = 12 . 9.4 ns 23 turn - off time t d(off) tf 3 8.4 19 .6
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 typical chatrcteristics
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 typical chatrcteristics
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 typical chatrcteristics
st 04n 20 d n channel enhancement mode mosfet 4 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ?200 8 , stanson corp. st 04n 20 d 2 0 1 4 . v1 p ackage outline sop - 8p
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